Pulsed Laser Deposition of Tungsten Thin Films on Graphite

Wassim Kassem; Malek Tabbal; Mohamad Roumie

doi:10.4028/www.scientific.net/AMR.324.77

Paper Titles

Effects of Aging Heat Treatment on the Microstructure of Ti-Nb and Ti-Nb-Sn Alloys Employed as Biomaterials
p.61

Effect of Powder Characteristics on the Densification of Sintered Alumina
p.65

Preparation and Characterization of High-Copper Restorative Dental Alloys Corrected
p.69

Potential of TaO_XN_Y Thin Films Deposited by Reactive Sputtering as Antireflective Coatings: Composition and Optical Properties
p.73

Pulsed Laser Deposition of Tungsten Thin Films on Graphite
p.77

Nature and Role of Various Si-Based Sensitizers for Er³⁺ Ions in Silicon-Rich Silicon Oxide Thin Films
p.81

Compliance at the GaSb/GaP Interface by Misfit Dislocations Array
p.85

Streamer-Surface Interaction in Heptane with Micro-Gaps
p.89

Quantification the Effect of the Thickness of Thin Films on their Elastic Parameters
p.93

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 324Pulsed Laser Deposition of Tungsten Thin Films on...

Pulsed Laser Deposition of Tungsten Thin Films on Graphite

Abstract:

Thin coatings of Tungsten were deposited on substrates fabricated by pre-depositing graphite thin layers on Si(100) wafers. We ablate pure W target using a 20 ns KrF excimer laser (248 nm) in an Ar ambient. The effect of background gas pressure, substrate temperature, and laser fluence, on the properties of the deposited W layers is studied using several techniques including X-Ray Diffraction, Atomic Force Microscopy, surface profilometry, and Rutherford Back-Scattering spectrometry. Our results indicate that the deposited layers consist of the well-crystallized body-centered-cubic α-W phase with bulk-like properties, particularly for films deposited at a substrate temperature of 450°C, laser fluence greater than 400mJ, and pressure of about 10mTorr.