Pulsed Laser Deposition of Tungsten Thin Films on Graphite
Thin coatings of Tungsten were deposited on substrates fabricated by pre-depositing graphite thin layers on Si(100) wafers. We ablate pure W target using a 20 ns KrF excimer laser (248 nm) in an Ar ambient. The effect of background gas pressure, substrate temperature, and laser fluence, on the properties of the deposited W layers is studied using several techniques including X-Ray Diffraction, Atomic Force Microscopy, surface profilometry, and Rutherford Back-Scattering spectrometry. Our results indicate that the deposited layers consist of the well-crystallized body-centered-cubic α-W phase with bulk-like properties, particularly for films deposited at a substrate temperature of 450°C, laser fluence greater than 400mJ, and pressure of about 10mTorr.
Maher Soueidan, Mohamad Roumié and Pierre Masri
W. Kassem et al., "Pulsed Laser Deposition of Tungsten Thin Films on Graphite", Advanced Materials Research, Vol. 324, pp. 77-80, 2011