Pulsed Laser Deposition of Tungsten Thin Films on Graphite

Abstract:

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Thin coatings of Tungsten were deposited on substrates fabricated by pre-depositing graphite thin layers on Si(100) wafers. We ablate pure W target using a 20 ns KrF excimer laser (248 nm) in an Ar ambient. The effect of background gas pressure, substrate temperature, and laser fluence, on the properties of the deposited W layers is studied using several techniques including X-Ray Diffraction, Atomic Force Microscopy, surface profilometry, and Rutherford Back-Scattering spectrometry. Our results indicate that the deposited layers consist of the well-crystallized body-centered-cubic α-W phase with bulk-like properties, particularly for films deposited at a substrate temperature of 450°C, laser fluence greater than 400mJ, and pressure of about 10mTorr.

Info:

Periodical:

Edited by:

Maher Soueidan, Mohamad Roumié and Pierre Masri

Pages:

77-80

DOI:

10.4028/www.scientific.net/AMR.324.77

Citation:

W. Kassem et al., "Pulsed Laser Deposition of Tungsten Thin Films on Graphite", Advanced Materials Research, Vol. 324, pp. 77-80, 2011

Online since:

August 2011

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$35.00

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