Simulation of the Effect of Power on the Properties of Si-Based Films Deposited by PECVD

Guo Jun Jin; Gui Qin Li; Yi Sun; Li Xin Lu; Song Lin; You Gen Tang

doi:10.4028/www.scientific.net/AMR.415-417.1859

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 415-417Simulation of the Effect of Power on the...

Simulation of the Effect of Power on the Properties of Si-Based Films Deposited by PECVD

Abstract:

Two-dimensional modeling and the computational fluid dynamics simulation are performed to investigate the deposition rate and the uniformity of the thin film under different power in PECVD reaction chamber using 13.56 MHz frequency. The results of the simulation show that as the power increased, the deposition rate of the thin film first increased gradually and then saturated, but the changes of power have little effect on uniformity.

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Periodical:

Advanced Materials Research (Volumes 415-417)

Pages:

1859-1862

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.415-417.1859

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Online since:

December 2011

Authors:

Guo Jun Jin, Gui Qin Li, Yi Sun, Li Xin Lu, Song Lin, You Gen Tang

Keywords:

Computational Fluid Dynamics (CFD), PECVD, Simulation, Thin Film

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