Effects of Deposition Parameters and Annealing Temperatures on the Characteristics of the Sr0.6Ba0.4Nb2O6 Thin Films

Chao Chin Chan; Yuan Tai Hsieh; Cheng Yi Chen; Wen Cheng Tzou; Chia Ching Wu; Chang Fu Yang

doi:10.4028/www.scientific.net/AMR.415-417.1867

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Residual Stress and Dielectric Property of Al₂O₃ Films on N-Type Si-(100) Substrate
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Effects of Deposition Parameters and Annealing Temperatures on the Characteristics of the Sr_0.6Ba_0.4Nb₂O₆ Thin Films

Abstract:

Sr_0.6Ba_0.4Nb₂O₆ (SBN) thin films were prepared by radio frequency (RF) sputtering onto the SiO₂/Si/Al and Pt/Ti/Si substrates to form the MFIS and MFM structures. Their deposition rates increased with decreasing oxygen concentration and with increasing RF power. Their optimal deposition parameters were the substrate temperature of 500°C, chamber pressure of 10 mTorr, oxygen concentration of 40%, and RF power of 120W, respectively. The rapid temperature annealing (RTA) process had large effects on the grain growth of the SBN thin films. The effects of different RTA temperatures on the leakage current density - electrical field curves and the capacitance - voltage curves of the SBN thin films were also investigated.