Residual Stress and Dielectric Property of Al₂O₃ Films on N-Type Si-(100) Substrate

Abstract:

The aluminum oxide (Al₂O₃) films are grown on n-type Si-(100) substrate by electron beam evaporation depending on the different substrate temperatures. The residual stress, I-V and C-V characteristics are investigated by wafer stress analyzer and capacitance meter, respectively. The results show that different temperature is important condition to the preparation of Al₂O₃ film. It can be concluded that the residual stress increases with increasing the substrate temperature, while the stress decreases after annealing in N₂ condition. C-V characteristic curves reveal that capacitance increases while the temperature increases. It also can be found that capacitance becomes smaller in the same substrate temperature at various frequencies of 100K, 500K and 1M.

• Periodical: Advanced Materials Research (Volumes 415-417)
• Pages: 1863-1866
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.415-417.1863
• Online since: December 2011
• Authors: Ying Dong Pu, Wu Tang, Yi Peng Chao, Yu Tong Yang
• Keywords: Dielectric Property, Electron Beam Evaporation, Residual Stress

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