Study of Electronic Structures and Transport Properties on Saturated GaN Nanowires

Abstract:

Geometry structure, electronic structure and electronic transport properties of saturated hexagonal single crystalline GaN nanowires in the [001] growth direction have been investigated based on generalized gradient approximation (GGA) of density functional theory (DFT) and non-equilibrium green's function (NEGF) method. The results show, there is a contraction of the bond lengths of the saturated GaN nanowires after optimization; the nanowires have direct band gap, and band gap decreases with the increase of the cross section of nanowires; the electronic density of state and electronic transmission spectra of two-probe system have their own pulse-type sharp peaks with almost the same location of electron energy; the curves of I-V characteristics of the three saturated GaN nanowires are symmetric over the entire bias-voltage range, and they are semiconducting.

• Periodical: Advanced Materials Research (Volume 465)
• Pages: 118-124
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.465.118
• Online since: February 2012
• Authors: En Ling Li, Peng Fei Zhu, Tao Zhao, De Ming Ma, Xue Wen Wang
• Keywords: Density Function Theory (DFT), Electronic Transport, GaN Nanowires

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