Characterization of Anatase and Rutile TiO2 Thin Films Deposited by Two Cathodes Sputtering System
Titanium dioxide, TiO2, thin films were deposited on unheated Si (100) wafers by two cathodes sputtering system. However, during the deposition of TiO2 films only one cathode was used. A pure metallic titanium was used as a sputtering target. Argon and oxygen were used as sputtered gas and reactive gas, respectively. TiO2 films were deposited at the argon and oxygen ratio of 1:4 and a total pressure of 5.0 x 10-3 mbar. The distance between the target and the center point of substrate was 12 cm. For each deposition of TiO2 films, the position of substrate was changed every 2 cm on the radial position of the cathode. The deposition time for each deposition was 60 min. The films were characterized by X-ray diffraction (XRD) technique and transmission electron microscopy (TEM). The XRD results and TEM images show that the crystalline rutile TiO2 films can be successfully deposited on an unheated substrate.
N. Witit-Anun et al., "Characterization of Anatase and Rutile TiO2 Thin Films Deposited by Two Cathodes Sputtering System", Advanced Materials Research, Vols. 55-57, pp. 469-472, 2008