Crystalline and Structural Properties Dependence on RF Power and Deposition Temperature of Sputtered Nanocrystalline Silicon Thin Films on Teflon and Glass Substrates

Abstract:

Nanocrystalline silicon (nc-Si) thin films were deposited on glass and polytetrafluoroethylene (PTFE, teflon) substrates using Radio frequency (RF) magnetron sputtering. The effect of RF power and deposition temperature on the physical and structural properties of nc-Si on the glass and Teflon substrate was studied. The thin films properties were examined by Raman spectroscopy and field emission scanning electron microscopy (FESEM). We found that the thickness of thin films increased with increased RF power and deposition temperature. Raman spectroscopy results it showed that, with increasing RF power and deposition temperature can cause the changing of crystallinity on both glass and Teflon substrate.

• Periodical: Advanced Materials Research (Volume 576)
• Pages: 475-479
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.576.475
• Online since: October 2012
• Authors: Norhidayatul Hikmee Mahzan, Shaiful Bakhtiar Hashim, Sukreen Hana Herman, M. Rusop
• Keywords: Deposition Temperature, Nanocrystalline Silicon, Polytetrafluoroethylene (PTFE), RF Magnetron Sputtering, RF Power

References

[1] Ian Y.Y. Bu, Room temperature synthesis of nanocrystalline silicon by aluminium induced crystallization for solar cell applications, Vacuum. 86 (2011) 106-110.

DOI: 10.1016/j.vacuum.2011.05.002

[2] Zhao Erjing, Zhang Weijia, Lin Jun, Yang Dongjie, Havugimana Jean Jacques, Zhang Jing, Preparation of ITO thin films applied in nanocrystalline silicon solar cells, Vacuum. 86 (2011) 290-294.

DOI: 10.1016/j.vacuum.2011.06.019

[3] Masaki Hara, High mobility bottom gate nanocrystalline-Si thin-film transistors, Thin Solid Films. 519 (2011) 3922-3924.

DOI: 10.1016/j.tsf.2011.01.283

[4] S.W. Kim, D.L. Choi, Nanocrystalline silicon fabrication by conventional plasma enhanced chemical vapor deposition for bottom gate thin film transistor, Materials Letters. 64 (2010) 1975-(1977).

DOI: 10.1016/j.matlet.2010.06.031

[5] P.I. Hsu, M. Huang, S. Wagner, Z. Suo, J.C. Sturm, Amorphous Si TFTs on plastically deformed spherical domes, Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays, Materials Research Society Symposium Proceedings 621 (2000).

DOI: 10.1016/s0022-3093(01)01156-5

[6] F. Villar, J. Escarré, A. Antony, M. Stella, F. Rojas, J.M. Asensi, J. Bertomeu and J. Andreu, Nanocrystalline silicon thin films on PEN substrates, Thin Solid Films. 516 (2008) 584–587.

DOI: 10.1016/j.tsf.2007.06.196

[7] Wei Li, Donglin Xia, Huifang Wang and Xiujian Zhao, Hydrogenated nanocrystalline silicon thin film prepared by RF-PECVD at high pressure, Journal of Non-Crystalline Solids 356 (2010) 2552–2556.

DOI: 10.1016/j.jnoncrysol.2010.07.064

[8] D. Smith, Thin Film Deposition: Principles and Practice.

[9] Y. Leconte, P. Marie, X. Portier, M. Lejeune and R. Rizk, Pronounced crystallization of silicon layers deposited with high deposition rates at temperatures < 200oC, Thin Solid Films. 427 (2003) 252.

DOI: 10.1016/s0040-6090(02)01197-5

[10] Deuk-Kyu Hwang, Kyu-Hyun Bang, Min-Chang Jeong and Jae-Min Myoung, Effects of RF power variation on properties of ZnO thin films and electrical properties of p–n homojunction, Journal of Crystal Growth. 254 (2003) 449–455.

DOI: 10.1016/s0022-0248(03)01205-3

[11] Kang TD, Lee H, Park SJ, Jang J and Lee S, Microcrystalline silicon thin films studied using spectroscopic ellipsometry, Journal of Applied Physics. 92 (2002) 2467.

DOI: 10.1063/1.1499980