Effect of Ag Doping on Structural, Optical and Electrical Properties of SnS:Ag Thin Films Prepared by Pulse Electroposition

Abstract:

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Silver-doping in SnS films can improve the semiconducting properties of SnS films. Based on our previous research, SnS:Ag thin films were deposited on ITO coated glass by pulse electro-deposition in order to study their structural, optical and electrical properties. SnS:Ag thin films were characterized with X-ray diffraction (XRD) , Scanning Electron Microscope (SEM) and some other methods. The primary composition of the films is SnS, but maybe there is a little quantity of SnS2, Ag8SnS6 and other compounds. The doped films exhibit good crystallization with big grain size. They have an optical gap of 1.66~1.89eV and a high absorption coefficient (α>5×104cm-1). Hall measurement has shown that all the samples are of p-type conduction with low resistivity of the order of 10-3Ω•cm, and the carrier concentration increases to 1019cm-3 after Ag-doping. In conclusion, the semiconducting properties of the SnS films have been improved by silver-doping. Thus, SnS:Ag thin films can be used as solar cells absorbers.

Info:

Periodical:

Advanced Materials Research (Volumes 60-61)

Edited by:

Xiaohao Wang

Pages:

105-109

DOI:

10.4028/www.scientific.net/AMR.60-61.105

Citation:

Y. L. Yang et al., "Effect of Ag Doping on Structural, Optical and Electrical Properties of SnS:Ag Thin Films Prepared by Pulse Electroposition", Advanced Materials Research, Vols. 60-61, pp. 105-109, 2009

Online since:

January 2009

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$35.00

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