A Bulk RF MEMS Switch by Silicon-to-GaAs Bonding

Le Lu; Jian Zhu; Shi Xin Jian; Chen Chen

doi:10.4028/www.scientific.net/AMR.60-61.224

Paper Titles

Effect of the Thickness Uniformity in Micro-Electroforming Process by Dividing Conductive Zone on Cathode
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Single Neuron Adaptive PID Control of the Silicon-Based Integrated Micro Nano-Positioning XY-Stage
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Modeling of Capacitive Microaccelerometers with Squeeze Film Damping and Electrostatic Effects Using Model Order Reduction
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Real-Time and High-Performance Attitude and Heading Reference System Based on MIMU/Magnetometers
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A Bulk RF MEMS Switch by Silicon-to-GaAs Bonding
p.224

Fabrication of Nanomechanical Resonators in Silicon Nitride
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Investigation on Fine Polishing Technique of Silicon Wafer
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Electrical Model of Inside Sense Outside Drive Frame Micro-Gyroscope Including Quadrature Error and Coriolis Offset
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Advance of the Micro-Magnetometer MEMSMag Research
p.241

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 60-61A Bulk RF MEMS Switch by Silicon-to-GaAs Bonding

A Bulk RF MEMS Switch by Silicon-to-GaAs Bonding

Abstract:

. A Bulk RF MEMS switch is present in this paper. The beam structure and transmission line are separated fabricated on silicon and gallium arsenide (GaAs) wafer. The beam structure, up electrode, contact and anchor are fabricated on the silicon wafer. And transmission line and down electrode are made on the GaAs substrate. Two parts of the switch are bonded together by wafer bonding using gold layer as seed. The total area of the switch is 600 um X 600 um.