A Bulk RF MEMS Switch by Silicon-to-GaAs Bonding

Abstract:

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. A Bulk RF MEMS switch is present in this paper. The beam structure and transmission line are separated fabricated on silicon and gallium arsenide (GaAs) wafer. The beam structure, up electrode, contact and anchor are fabricated on the silicon wafer. And transmission line and down electrode are made on the GaAs substrate. Two parts of the switch are bonded together by wafer bonding using gold layer as seed. The total area of the switch is 600 um X 600 um.

Info:

Periodical:

Advanced Materials Research (Volumes 60-61)

Edited by:

Xiaohao Wang

Pages:

224-227

DOI:

10.4028/www.scientific.net/AMR.60-61.224

Citation:

L. Lu et al., "A Bulk RF MEMS Switch by Silicon-to-GaAs Bonding ", Advanced Materials Research, Vols. 60-61, pp. 224-227, 2009

Online since:

January 2009

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Price:

$35.00

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