Investigation on Fine Polishing Technique of Silicon Wafer

Abstract:

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This paper presents a kind of fine polishing technique that adopts three-step polishing procedure and keeping-wafer-wet method. In order to remove the damaged layer created by lapping process or improve surface condition of silicon wafer, polishing process is needed. In this paper, techniques of improving the surface roughness of silicon are studied, three different polishing processes are presented, and optimum condition has been attained. Experiments of Si-Si bonding are also performed, and results show that after polishing ends, keeping surface of wafer wet is necessary to avoid slurry agglomerating.

Info:

Periodical:

Advanced Materials Research (Volumes 60-61)

Edited by:

Xiaohao Wang

Pages:

232-235

DOI:

10.4028/www.scientific.net/AMR.60-61.232

Citation:

Q. C. Gong et al., "Investigation on Fine Polishing Technique of Silicon Wafer", Advanced Materials Research, Vols. 60-61, pp. 232-235, 2009

Online since:

January 2009

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Price:

$35.00

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