Inducing Layer Dependence of BiFeO3 Based Multilayer Capacitors

Ya Feng Luo; Dan Xie; Yong Yuan Zang; Rui Song; Tian Ling Ren; Li Tian Liu

doi:10.4028/www.scientific.net/AMR.60-61.256

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High Efficient Synthesis of Carbon Nanocoils by Catalysts Produced by a Fe and Sn Containing Solution
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Inducing Layer Dependence of BiFeO₃ Based Multilayer Capacitors
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The Design of a MEMS Surface Resonant Magnetometer
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 60-61Inducing Layer Dependence of BiFeO3 Based...

Inducing Layer Dependence of BiFeO₃ Based Multilayer Capacitors

Abstract:

Multifunctional BiFeO3 (BFO) thin films were deposited on Bi3.15Nd0.85Ti3O12 (BNdT)/Pt and Pb(Zr1−x,Tix)O3 (PZT)/Pt substrates respectively by sol-gel process. The ferroelectric properties were studied for Metal-Ferroelectric-Mental (MFM) capacitors. The MFM structure exhibited well clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization of multilayer thin films achieved. The remnant polarization (2Pr) of the BFO/PZT and BFO/PZT multilayer capacitors were 45.1μC/cm2 and 23.2μC/cm2, respectively at the applied voltage of 8V. The leakage current of Pt/BFO/BNdT/Pt is about 3×10-5A/㎝2 at applied voltage of 4V, one order smaller than Pt/BFO/PZT/Pt capacitor. For the BFO/BNdT/Pt, it exhibited a weak saturated ferromagnetic response at room temperature and the multilayer was anti-ferromagnetic. However, for the BFO/PZT/Pt, well-developed M-H loops together with remnant magnetizations can be observed in at room temperature. The highest saturation magnetizations (Ms) of both capacitors were measured to be 2.47emu/cm3.