Inducing Layer Dependence of BiFeO3 Based Multilayer Capacitors

Abstract:

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Multifunctional BiFeO3 (BFO) thin films were deposited on Bi3.15Nd0.85Ti3O12 (BNdT)/Pt and Pb(Zr1−x,Tix)O3 (PZT)/Pt substrates respectively by sol-gel process. The ferroelectric properties were studied for Metal-Ferroelectric-Mental (MFM) capacitors. The MFM structure exhibited well clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization of multilayer thin films achieved. The remnant polarization (2Pr) of the BFO/PZT and BFO/PZT multilayer capacitors were 45.1μC/cm2 and 23.2μC/cm2, respectively at the applied voltage of 8V. The leakage current of Pt/BFO/BNdT/Pt is about 3×10-5A/㎝2 at applied voltage of 4V, one order smaller than Pt/BFO/PZT/Pt capacitor. For the BFO/BNdT/Pt, it exhibited a weak saturated ferromagnetic response at room temperature and the multilayer was anti-ferromagnetic. However, for the BFO/PZT/Pt, well-developed M-H loops together with remnant magnetizations can be observed in at room temperature. The highest saturation magnetizations (Ms) of both capacitors were measured to be 2.47emu/cm3.

Info:

Periodical:

Advanced Materials Research (Volumes 60-61)

Edited by:

Xiaohao Wang

Pages:

256-259

DOI:

10.4028/www.scientific.net/AMR.60-61.256

Citation:

Y. F. Luo et al., "Inducing Layer Dependence of BiFeO3 Based Multilayer Capacitors", Advanced Materials Research, Vols. 60-61, pp. 256-259, 2009

Online since:

January 2009

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Price:

$35.00

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