This paper presents deep-hole etching process by inductively coupled plasma (ICP),the hole is higher than 400um ,and its diameter is 200um wide. Etching process successfully used in anchor fabrication below 150 um deep in micro-inertial devices, is first used in deep-hole etching .The result is badly, the sidewall surface is coarse, and the sidewall perpendicularity is poor,the dimension difference between upper and down diameter is as large as 35um.Because with the depth increasing , deep-hole etching brings new problem, such as fluorine(F) radical and ions distributing very differently between in down and upper area, also extracting reactant and temperature distribution . To solve above problems, process parameters such as gas flow mass and time in one reaction cycle, source and substrate power, reaction pressure and temperature should be adjusted. Through several experiments, optimal process is applied and the result is satisfied .From SEM figure, The the sidewall surface is smoother, the sidewall perpendicularity is good, the dimension difference between upper and down diameter is controlled in 1.6um,the sidewall angle is 89.78°. The process has been used in deep-hole fabrication of micromachined filter, and the rate of device enhances largely at present.