Size-Dependent Elasticity of Silicon Nanowires

W.W. Zhang; Qing An Huang; H. Yu; L.B. Lu

doi:10.4028/www.scientific.net/AMR.60-61.315

Paper Titles

Design and Simulation of a Z-Axis Dual Proof Mass Micromachined Gyroscope with Decoupled Oscillation Modes
p.298

Fabrication of Micro Via-Hole by Wet Etching of Pyrex Glass
p.303

Study of Compensatation of the Nonlinear Errors for Thick Film Capacitor Micro-Displacement Sensor
p.307

Highly Sensitive Determination of Dopamine Using Osmium/Nafion Modified Disposable Integrated Biosensor
p.311

Size-Dependent Elasticity of Silicon Nanowires
p.315

A New Method Based on Electropolymerizing Staphylococcal Protein A to Immobilize Antibody in Micro Amperometric Immunosensor
p.320

Study on the Gold-Gold Thermocompression Bonding for Wafer-Level Packaging
p.325

Electrokinetic Instability Flow in Nanofilm-Coated Microfluidic Channels
p.330

Design and Simulation of a Micromachined CMOS Temperature Sensor
p.334

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 60-61Size-Dependent Elasticity of Silicon Nanowires

Size-Dependent Elasticity of Silicon Nanowires

Abstract:

Molecular dynamics simulations are carried out to characterize the mechanical properties of [001] and [110] oriented silicon nanowires, with the thickness ranging from 1.05nm to 3.24 nm. The nanowires are taken to have ideal surfaces and (2×1) reconstructed surfaces, respectively. A series of simulations for square cross-section Si nanowires have been performed and Young’s modulus is calculated from energy–strain relationship. The results show that the elasticity of Si nanowires is strongly depended on size and surface reconstruction. Furthermore, the physical origin of above results is analyzed, consistent with the bond loss and saturation concept. The results obtained from the molecular dynamics simulations are in good agreement with the values of first-principles. The molecular dynamics simulations combine the accuracy and efficiency.