A In Situ Measuring Method for Stress Gradient of a MEMS Film

Abstract:

Article Preview

The stress gradient of a deposited thin-film is a mechanical parameter that affects the performance of MEMS devices, so in-situ measuring stress gradient of a thin-film is great significant. A new in-situ measuring method based on a center-anchored circular plate is presented. The Mirau interferometer has been used to measure the out-of-plane height at the edge of circular plate, then the curvature radius of the plate and the stress gradient of the film can be calculated. The measuring method has been verified by CoventorWare. The accuracy of the presented measuring method is ideal. The advantages of the method also have been discussed.

Info:

Periodical:

Advanced Materials Research (Volumes 60-61)

Edited by:

Xiaohao Wang

Pages:

357-360

DOI:

10.4028/www.scientific.net/AMR.60-61.357

Citation:

H. Chen et al., "A In Situ Measuring Method for Stress Gradient of a MEMS Film", Advanced Materials Research, Vols. 60-61, pp. 357-360, 2009

Online since:

January 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.