Preparation of CsI(Tl) Scintillation Film by RF Magnetron Sputter Method and its Structural and Optical Characterization

Abstract:

Thallium-doped cesium iodide CsI(Tl) scintillation film has been manufactured by radio frequency (RF) magnetron sputter method onto the quartz glass substrates. The X-ray diffraction (XRD) pattern of the film shows preferable growth of the crystalline film in the (200) orientation. The optical and scintillation properties of CsI(Tl) film were investigated, including photoluminescence excitation (PLE), photoluminescence (PL), X-ray excited luminescence (XEL) spectra and decay curve. The main emission peak at about 2.28 eV is related to the radiative relaxation from the strong-off configuration of localized excitons around Tl+ ions. Under UV excitation, the 2.28 eV emission of CsI(Tl) film presents a single exponential decay with 545 ns.

• Periodical: Advanced Materials Research (Volumes 652-654)
• Pages: 628-633
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.652-654.628
• Online since: January 2013
• Authors: He Feng, Cheng Long Chen, Mitch Chou, Guo Hao Ren, Jia Yue Xu
• Keywords: CsI(Tl), Growth Orientation, Opitcal Properties, Sputtering, Thin Film

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