Fabrication of Silicon Nanowires by Electroless Etching for Thermoelectric Application

Abstract:

The fabrication procedure of silicon nanowire thermoelectric device has been developed based on the electroless etching method. Under a fixed etching solution concentration ratio and the etching reaction temperature, silicon nanowire arrays of different lengths manufactured at different etching time were investigated. The longer etching time results in the longer nanowire length. The silicon nanowire arrays were utilized to produce a silicon nanowire thermoelectric device. The I-V characteristics of the present SiNWs thermoelectric device were recorded under different heating temperatures, and the power outputs of silicon nanowire thermoelectric devices were calculated. The longer the silicon nanowire thermoelectric device lines, the greater the power output of thermoelectric device is. The SiNWs TED power output in the present study ranges from 1.62 to 7.2 nano-Watt with the chip size 2×2 cm² while the applied temperature at 150 °C.

• Periodical: Advanced Materials Research (Volumes 652-654)
• Pages: 642-646
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.652-654.642
• Online since: January 2013
• Authors: Hsin Luen Tsai
• Keywords: Electroless Etching Method, Silicon Nanowires (SiNWs), Thermoelectric Device (TED)

References

[1] L. Weber, E. Gmelin: Appl. Phys. A 53 (1991), p.136–140

[2] A. I. Hochbaum, R. Chen, R. D. Delgado, W. Liang, E. C. Garnett: Nature, 451 (2008), p.163.

[3] A. I. Boukai, Y. Bunimovich, J. Tahir-Kheli, J. K. Yu, W. A. Goddard, J. R. Heath: Nature, 451 (2008), pp.168-171.

DOI: 10.1038/nature06458

[4] K. Q. Peng, Y. J. Yan, S. P. Gao, J. Zhu: Advanced Materials, No. 16. (2002)

[5] K. Q. Peng, Y. J. Yan, S. P. Gao, J. Zhu: Advanced Functional Materials, 13, No. 2. (2003)

[6] K. Peng, Y. Wu, H. Fang, X. Zhong, Y. Xu, and J. Zhu: Angewandte Chemie, 44 (2005) , pp.2737-2742.