The Study of Au/TiO2/Au Resistive Switching Memory with Crosspoint Structure

An Yan; Gang Liu; Chao Zhang; Liang Fang

doi:10.4028/www.scientific.net/AMR.652-654.659

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 652-654The Study of Au/TiO2/Au Resistive Switching Memory...

The Study of Au/TiO₂/Au Resistive Switching Memory with Crosspoint Structure

Abstract:

This paper presets a process of fabrication and measurements of Au/TiO₂/Au resistive switching memory. The device was fabricated using crosspoint structure, and the electrode width and TiO₂ film of which are 1 µm and 50 nm. According to our experimental result, resistive switching cells exhibit good stability and reliability with bipolar resistive switching behavior.

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Advanced Materials Research (Volumes 652-654)

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659-663

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.652-654.659

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Online since:

January 2013

Authors:

An Yan, Gang Liu, Chao Zhang, Liang Fang

Keywords:

Bipolar Resistive Switching, Crosspoint, Resistive Switching Memory, TiO₂

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