Study on 600V Super Junction Power MOSFET Optimization and Electric Characteristics Using Deep Trench Filling

Abstract:

Power MOSFET device driven by voltage is designed as a power switching device in large capacity power supply system. It is also widely used in converters and motor controllers. However, the on-resistance characteristic during the increase of breakdown voltage is a problem. The on-resistance of super junction power MOSFET is lower by 1/3 than existing planar power MOSFET on 600V basis. This study designed 600V planar MOSFET/super junction MOSFET and compared their operation characteristics for lower on-resistance and higher breakdown voltage. The result suggested that super junction power MOSFET is better than planar power MOSFET by having 40% better on-state voltage drop performance.

• Periodical: Advanced Materials Research (Volume 663)
• Pages: 698-702
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.663.698
• Online since: February 2013
• Authors: Bum June Kim, Eun Sik Jung, Ey Goo Kang
• Keywords: Breakdown Voltage, Deep Trench, MOSFET, Power Device, Super Junction

References

[1] E. G. Kang and M. Y. Sung, J. KIEEME, 15 , 758(2002).

[2] T. J. Nam, H. S. Chung and E. G. Kang, Optimal Design of GaN Power MOSFET Using Al2O3 Gate (J. KIEEME, Vol. 24, No. 9, (2011), p.713.

[3] Malvino, Albert Paul, Bates, David J., Electronic Principles, ( McGraw-Hill College , 2006. 03. 31).

[4] Gates, Earl D. i, Introduction to Electronics 4/E Hardcover, (Delmar , 2001. 01. 01).

[5] S. S. Kyoung, J. H. Seo, Y. H. Kim, J. S. Lee, E. G. Kang, and M. Y. Sung, J. KIEEME, 22, 12 (2009).

[6] H. S. Lee, E. G. Kang, A. R. Shin, H. H. Shin, and M. Y. Sung, KIEE, 7 (2006).

[7] WILLIAM H. HAYT, Jr. ENG INEER INGELECT ROMAGNETICS-7/E (MCGRAWHILL , 2005. 08. 18).