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C (4×4) Reconstruction on Arsenic-Rich GaAs (001) Surface after Phase Transition
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C (4×4) Reconstruction on Arsenic-Rich GaAs (001) Surface after Phase Transition

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Abstract:

C(4×4) reconstruction on arsenic-rich GaAs(001) surface after phase transition has been investigated from the experiment and simulation. We found that the c(4×4) As-rich reconstruction structure of the GaAs (001) surface can be best depicted with the model which there are three As-As dimers without Ga-As dimers in a reconstructed unit cell, and these dimers are found to be aligned perpendicular to the As dimers on β2(2×4) surface.

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Periodical:

Advanced Materials Research (Volume 669)

Pages:

19-23

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.669.19

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Online since:

March 2013

Authors:

Zi Jiang Luo, Xun Zhou, Ji Hong Wang, Xiang Guo, Qing Zhou, Ke Liu, M.Z. Hu, Zhao Ding

Keywords:

Arsenic-Rich GaAs (001), C(4×4) Reconstruction, MBE, STM

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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