Experimental Research on UV Laser and High-Pressure Water-Assisted YAG Laser Dicing SiC Wafer

Abstract:

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In this paper, the comparative experimental research on DPSS UV laser (wavelength is 355nm) and high-pressure water-assisted YAG laser dicing SiC wafer was done. The results show that is strict with the performance of laser source and the dicing technique parameters in UV laser dicing the SiC wafer, and the dicing surface of good quality can be obtained only when the parameters of laser source and dicing technology vary in a narrow range. Contrarily, the SiC wafer dicing technology using high-pressure water-assisted YAG laser has a perfect flexibility with the laser source and dicing apparatus, and the good dicing surface can be obtained even if the process parameters vary in a wide range.

Info:

Periodical:

Advanced Materials Research (Volumes 69-70)

Edited by:

Julong Yuan, Shiming Ji, Donghui Wen and Ming Chen

Pages:

243-247

DOI:

10.4028/www.scientific.net/AMR.69-70.243

Citation:

L. J. Yang et al., "Experimental Research on UV Laser and High-Pressure Water-Assisted YAG Laser Dicing SiC Wafer", Advanced Materials Research, Vols. 69-70, pp. 243-247, 2009

Online since:

May 2009

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Price:

$35.00

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