Study of Good Yield and Efficiency in TFT-LCD Module Process

Zai Liang Chen; C.Y. Wang; Zheng Qiang Tang

doi:10.4028/www.scientific.net/AMR.69-70.234

Paper Titles

Experimental Study on Parameter Optimization of Silicon Wafer CMP Using Composite Abrasives Slurry
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Electrochemical Micro Machining of Stainless Steel with Voltage Pulses
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Study on Semi-Fixed Abrasive Lapping of Ultra-Thin Silver Electrode Layer
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Fabrication of Micro-Structures by Micro-ECM
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Study of Good Yield and Efficiency in TFT-LCD Module Process
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Test Research on Grinding Performance of the New Grinding Fluid in Power Ultrasonic Honing
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Experimental Research on UV Laser and High-Pressure Water-Assisted YAG Laser Dicing SiC Wafer
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Cathode Design of Aero-Engine Blades in Electrochemical Machining Based on Characteristics of Gap Distribution
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Observation in the Surface Roughness of Silicon Wafer during Semi-Fixed Abrasive Machining with Large Grains
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 69-70Study of Good Yield and Efficiency in TFT-LCD...

Study of Good Yield and Efficiency in TFT-LCD Module Process

Abstract:

This paper introduces the TFT-LCD (Tablet Film Transistor Liquid Crystal Displayer) module process that is composed by two stages, JI (JISO) process and MA (Module Assy) process. In JI process, the main defect phenomena are bonding particle and bonding defect, which have a bad effect on the product yield. In MA process, the key factor of the output is the inequality workload to every worker and unbalance of the production line. With the solution of plasma cleaning and pressure diversification, the bonding defect ratio descent from 0.34% to 0.14%. By making workload balance, the efficiency of MA process has been increased.