Experimental Study on Parameter Optimization of Silicon Wafer CMP Using Composite Abrasives Slurry

Xue Feng Xu; H.T. Ma; B.X. Ma; Wei Peng

doi:10.4028/www.scientific.net/AMR.69-70.214

Paper Titles

A Survey of the Machining Characteristics and Mechanical Polishing Technology of CVD Diamond Films
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Mould Machining of Structural Surface Based on Liquid-Solid Two Phase Abrasive Flow
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Modeling the Minimum Chip Thickness in Orthogonal Micro-Cutting Based on Plastic Strain Gradient
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Investigation of Material Removal and Grain Wear Mechanism in Single Point Diamond Scratching Tests on SiC
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Experimental Study on Parameter Optimization of Silicon Wafer CMP Using Composite Abrasives Slurry
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Electrochemical Micro Machining of Stainless Steel with Voltage Pulses
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Study on Semi-Fixed Abrasive Lapping of Ultra-Thin Silver Electrode Layer
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Fabrication of Micro-Structures by Micro-ECM
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Study of Good Yield and Efficiency in TFT-LCD Module Process
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 69-70Experimental Study on Parameter Optimization of...

Experimental Study on Parameter Optimization of Silicon Wafer CMP Using Composite Abrasives Slurry

Abstract:

In order to increase the material removal rate of silicon wafer, composite abrasives slurry was used in CMP. The mechanism of interaction between silica abrasives and polymer particles was analyzed. Small silica abrasives were seen to attach onto the surface of the polymer particles. Composite abrasives slurry was obtained by adding polymer particles into single abrasive slurry. Three key parameters, the concentration of colloidal silica, the concentration of polymer particle and the speed of polishing, which influence the material removal rate of silicon wafer were analyzed by Taguchi method and the optimal parameters were obtained. Experimental results indicated that the maximum material removed rate of 353nm/min was obtained when optimal craft parameters of 5% colloidal silica, 3% polymer particle, 50rpm plate and carrier rotation speed were selected.