Investigation of Material Removal and Grain Wear Mechanism in Single Point Diamond Scratching Tests on SiC

Q.L. Zhao; J.Y. Chen

doi:10.4028/www.scientific.net/AMR.69-70.209

Paper Titles

Research on Material Removal Characteristics of Nanoparticle Colloid Jet Machining
p.187

A Survey of the Machining Characteristics and Mechanical Polishing Technology of CVD Diamond Films
p.192

Mould Machining of Structural Surface Based on Liquid-Solid Two Phase Abrasive Flow
p.198

Modeling the Minimum Chip Thickness in Orthogonal Micro-Cutting Based on Plastic Strain Gradient
p.203

Investigation of Material Removal and Grain Wear Mechanism in Single Point Diamond Scratching Tests on SiC
p.209

Experimental Study on Parameter Optimization of Silicon Wafer CMP Using Composite Abrasives Slurry
p.214

Electrochemical Micro Machining of Stainless Steel with Voltage Pulses
p.219

Study on Semi-Fixed Abrasive Lapping of Ultra-Thin Silver Electrode Layer
p.225

Fabrication of Micro-Structures by Micro-ECM
p.229

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 69-70Investigation of Material Removal and Grain Wear...

Investigation of Material Removal and Grain Wear Mechanism in Single Point Diamond Scratching Tests on SiC

Abstract:

There has been increased interest in the use of SiC due to its excellent physical and mechanical properties. The diamond grinding process of SiC has been largely investigated in recent years, but the interface between diamond grain and SiC in grinding has not been completely understood. In this paper, a single diamond scratching method was presented in order to insight into the interface realizing on a SRV friction and abrasion test machine using three types of diamond grains with different shapes. The results analysis for material removal and diamond grain wear mechanisms in the interacting between the diamond grain and SiC can be useful to improve the grinding process of SiC.