Electrical Transport Properties of Single SiC NW-FET

Abstract:

A single SiC NW-FET (nanowire field effect transistor) was fabricated by FIB (Focus-Ion-Beam) method and the photo-electric properties of the device including I-V characteristic, transfer characteristic and time response et.al. were studied in this paper. SiC NWs (NWs) were prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The NWs were suspended in ethanol by ultrasonic, then sprayed onto a silicon wafer with 300nm silicon oxide. Pt electrodes were deposited directly by FEI NanoLab 600i along with the SiC NW on silicon wafer. The transfer characteristic of the device shows that the SiC NW is a n-type semiconductor and photoelectrical measurements of the device show an rapid change of voltage when applied a constant current and explored the device to 254nm UV light. The mechanism of photo-electric properties are discussed in the last. Our results show that the single SiC NW FET could be applied to a harsh environment due to its own excellent electrical and optical properties.

• Periodical: Advanced Materials Research (Volume 704)
• Pages: 281-286
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.704.281
• Online since: June 2013
• Authors: Gang Peng, Wen Bo Ma, Xiao Kun Huang, Ying Qiu Zhou, Yan Lan He, Xiao Yan Yu, Biao He
• Keywords: Chemical Vapor Deposition (CVD), Electrical Transport Properties, Focus Ion Beam (FIB), SiC Nw-FET

References

[1] K. Zekentes and K. Rogdakis, SiC nanowires: material and devices, Journal of Physics D: Applied Physics.44 (2011) 133001-(17).

DOI: 10.1088/0022-3727/44/13/133001

[2] J. C. Johnson, H. J. Choi, K. P. Knutsen, R. D. Schaller, P. Yang and R. J. Saykally, Single Gallium nitride nanowire lasers, nature materials.1 (2002) 106-110.

DOI: 10.1038/nmat728

[3] E. W. Wong, P. E. Sheehan and C. M. Lieber, Nanobeam mechanisms: elas- ticity, strength and toughness of nanorods and nanotubes, Science.277 (1997) 1971-1975.

DOI: 10.1126/science.277.5334.1971

[4] Z. W. Pan, H. L. Lai, C. K. Frederick, X. F. Duan, W. Y. Zhou, W. S. Shi, N. Wang, C. S. Lee, N. B. Wong, S. T. Lee and S. S. Xie, Oriented silicon carbide nanowires: synthesis and field emission properties, Adv. Mater.12 (2000) 1186-1190.

DOI: 10.1002/1521-4095(200008)12:16<1186::aid-adma1186>3.0.co;2-f

[5] T. Seeger, P. Kohler-Redlich and M. Ruhle, Synthesis of Nanometer-Sized SiC Whiskers in the Arc-Discharge, Adv.Mater.12 (2000) 279-282.

DOI: 10.1002/(sici)1521-4095(200002)12:4<279::aid-adma279>3.0.co;2-1

[6] R. B. Wu, B. S. Li, M. X. Gao, J. J. Chen, Q. M. Zhu and Y. Pan, Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties Nanotechnology.19 (2008) 335602-(8).

DOI: 10.1088/0957-4484/19/33/335602

[7] F. K. Cai, A. X. Zhang, J. L. Yin, H. F. Wang and X. H. Yuan, Preparation, characterization and photoluminescence properties of ultra long SiC/SiOx nanocables, Applied Physics A.91 (2008) 579-584.

DOI: 10.1007/s00339-008-4495-1

[8] G. Li, X. Li, Z. Chen, J. Wang, H. Wang and R. Che, Large Areas of Centimeters-Long SiC Nanowires Synthesized by Pyrolysis of a Polymer Precursor by a CVD Route, J. Phys. Chem. C.113 (2009) 17655-17660.

DOI: 10.1021/jp904277f

[9] K. Rogdakis, S. Lee, M. Bescond, S. Lee, E. Bano and K. Zekentes, 3C-Silicon Carbide Nanowire FET: An Experimental and Theoretical Approach, IEEE Transactions on Electron Devices.55 (2008) 1970-1976.

DOI: 10.1109/ted.2008.926667

[10] H. Seong, H. Choi, S. Lee, J. Lee and D. Choi, Optical and electrical transport properties in silicon carbide nanowires, Applied Physics Letters.85 (2004) 1256-1258.

DOI: 10.1063/1.1781749

[11] H. K. Seong, H. J. Choi, S. K. Lee, J. I. Lee and D. J. choi, Fabrication and electrical transport properties of CVD grown silicon carbide nanowires for field effect transistor, Mater. Sci.Forum.527-529 (2006) 771-774.

DOI: 10.4028/www.scientific.net/msf.527-529.771

[12] W. M. Zhou, X.Liu and Y.Zhang, Field-effect transistor based on β-SiC nanowire FET, IEEE Transactions on Electron Devices Lett.27 (2006) 463-466.

[13] W. Zhou, X. Liu and Y.Zhang, Simple approach to β-SiC nanowires: Synthesis, optical, and electrical properties, Appl. Phys. Lett.89 (2006) 223124-223121-223124-3.

[14] G. Peng, Y. Zhou, Y. He, X. Yu and G. Li, Fabrication and properties of ultraviolet photo-detectors based on SiC nanowires, Science China.55 (2012) 1168-1171.

DOI: 10.1007/s11433-012-4790-x

[15] W. Gotz, N. M. Johnson, C. Chen, H. Liu, C. Kuo and W. Imler, Activation energies of Si donors in GaN Appl. Phys. Lett.68 (1996) 3144-3146.

DOI: 10.1063/1.115805

[16] E. H. Rhoderick and R. H. Williams (1988). Metal-semicaonductor contact, Oxford.

[17] S. M. Sze (1981). Physics of Semiconductor Devices. New York.

[18] L. Kolaklieva and R. Kakanakov (2009). Ohmic contacts for High Power and Hagh Temperature Microelectronics. Bulgaria, Bulgarian Academy of Science.

DOI: 10.5772/7017

[19] K. Huang, Q. Zhang, F. Yang and D. He, Ultraviolet Photoconductance of a Single hexagonal WO3 Nanowire, Nano Res.3 (2010) 281-287.

DOI: 10.1007/s12274-010-1031-3