Temperature and Time-Resolved Dependence of Photoluminescence in InGaN Quantum Dots

Cheng Chen; Zhi Ren Qiu; Xiang Ping Shu; Zeng Cheng Li; Jian Ping Liu; Zhe Chuan Feng

doi:10.4028/www.scientific.net/AMR.750-752.927

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 750-752Temperature and Time-Resolved Dependence of...

Temperature and Time-Resolved Dependence of Photoluminescence in InGaN Quantum Dots

Abstract:

Temperature dependence of photoluminescence (PL) and time resolved photoluminescence (TRPL) were obtained by two experimental systems. The relative intensity and peak position of PL show S-shift variation with increasing temperature, which may result from temperature induce carriers redistribution. Fast decay time and slow decay time were fitted by double exponential function from decay curves of TRPL at different emission energy, and the decreasing trend of both fast decay and slow decay time with increasing photon energy is attributed to various channels of recombination in shallow and deep localized states.

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Periodical:

Advanced Materials Research (Volumes 750-752)

Pages:

927-930

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.750-752.927

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Online since:

August 2013

Authors:

Cheng Chen, Zhi Ren Qiu, Xiang Ping Shu, Zeng Cheng Li, Jian Ping Liu, Zhe Chuan Feng

Keywords:

AFM, InGaN Quantum Dots, Photoluminescence (PL), Temperature Dependence, Time Resolved Photoluminescence (TRPL)

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