Effect of La Contents on La-Doped Bi2Ti2O7 Dielectric Thin Films

Xue Na Yang; Jian An Liu; Bai Biao Huang; Si Jiang Gao

doi:10.4028/www.scientific.net/AMR.750-752.931

Paper Titles

Preparation and Luminescence Properties of ZnO–SiO₂–B₂O₃–Na₂O:Sm³⁺ Glass
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Magnetic Phase Transition and Magnetic Proporties of LaFe_11.6Si_1.4B_x Compounds
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Effect of Graphene Layer Number on the Performances of Graphene Nanosheets Counter Electrode for Dye-Sensitized Solar Cells
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Temperature and Time-Resolved Dependence of Photoluminescence in InGaN Quantum Dots
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Effect of La Contents on La-Doped Bi₂Ti₂O₇ Dielectric Thin Films
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Band-Tailored InAs/GaSb Superlattice in Infrared Application
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Full-Potential Study of the Magneto-Optical Kerr Effect for AuMnSb and AuMnSn
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Polycrystalline Silicon Films on SiO₂ Substrate Treated by Excimer Laser Annealing
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Space Charge Limited Current and Magnetoresistance in Si
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 750-752Effect of La Contents on La-Doped Bi2Ti2O7...

Effect of La Contents on La-Doped Bi₂Ti₂O₇ Dielectric Thin Films

Abstract:

La-doped (Bi_1-xLa_x)₂Ti₂O₇ (BLTO) thin films with different La contents have been grown by CSD method. All the XRD patterns of the samples showed that the films were polycrystalline films. The intensities of the peaks decreased with the increasing of La contents. The general trend of the changes of leakage current was decreased with the increasing of x. The case of dielectric constant as a function of La content is complicated. The rule of change of the dielectric constant is different with different la contents. In view of dielectric constant and dielectric loss, we think that the film of x=0.2 has relative low leakage current and high dielectric constant, which is considered to be adequate for a DRAM.