Single Crystalline SnO2:In Films Prepared on Sapphire by MOCVD

Abstract:

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1-12% {atomic ratio of In/(In+Sn)} indium-doped tin oxide (SnO2:In) films were successfully prepared on sapphire substrates by MOCVD method. HRTEM image showed that the obtained films were single crystalline films. The X-ray photoelectron spectroscopy showed the existence of non-stoichiometric oxide on the film surface. The Hall mobility and carrier concentration of the SnO2:In films varied with the In content increasing.

Info:

Periodical:

Advanced Materials Research (Volumes 79-82)

Edited by:

Yansheng Yin and Xin Wang

Pages:

759-762

DOI:

10.4028/www.scientific.net/AMR.79-82.759

Citation:

Z. G. Song et al., "Single Crystalline SnO2:In Films Prepared on Sapphire by MOCVD", Advanced Materials Research, Vols. 79-82, pp. 759-762, 2009

Online since:

August 2009

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$35.00

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