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Single Crystalline SnO2:In Films Prepared on Sapphire by MOCVD

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Abstract:

1-12% {atomic ratio of In/(In+Sn)} indium-doped tin oxide (SnO2:In) films were successfully prepared on sapphire substrates by MOCVD method. HRTEM image showed that the obtained films were single crystalline films. The X-ray photoelectron spectroscopy showed the existence of non-stoichiometric oxide on the film surface. The Hall mobility and carrier concentration of the SnO2:In films varied with the In content increasing.

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Periodical:

Advanced Materials Research (Volumes 79-82)

Pages:

759-762

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.79-82.759

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Online since:

August 2009

Authors:

Zhen Guo Song, Feng Ji, Jin Ma, Ti Ning, Xu An Pei, Yong Liang Tan

Keywords:

MOCVD, SnO2:In Films

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© 2009 Trans Tech Publications Ltd. All Rights Reserved

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