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Transparent Conducting SnO2:Zn Films Prepared on Sapphire by MOCVD
Abstract:
1-10% {atomic ratio of Zn/(Zn+Sn)} zinc-doped tin oxide (SnO2:Zn) films were successfully prepared on sapphire substrates by MOCVD method. The structural, optical and electrical properties of the SnO2:Zn films were investigated. The obtained films were high quality crystalline films with high a-axis orientation. The optical transmittance of the SnO2:Zn films with the thickness 1-1.4μm was about 80% in visible region. The Hall mobility and carrier concentration of the SnO2:Zn films varied with the Zn content increasing.
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771-774
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August 2009
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© 2009 Trans Tech Publications Ltd. All Rights Reserved
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