Transparent Conducting SnO2:Zn Films Prepared on Sapphire by MOCVD

Abstract:

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1-10% {atomic ratio of Zn/(Zn+Sn)} zinc-doped tin oxide (SnO2:Zn) films were successfully prepared on sapphire substrates by MOCVD method. The structural, optical and electrical properties of the SnO2:Zn films were investigated. The obtained films were high quality crystalline films with high a-axis orientation. The optical transmittance of the SnO2:Zn films with the thickness 1-1.4μm was about 80% in visible region. The Hall mobility and carrier concentration of the SnO2:Zn films varied with the Zn content increasing.

Info:

Periodical:

Advanced Materials Research (Volumes 79-82)

Edited by:

Yansheng Yin and Xin Wang

Pages:

771-774

DOI:

10.4028/www.scientific.net/AMR.79-82.771

Citation:

Z. G. Song et al., "Transparent Conducting SnO2:Zn Films Prepared on Sapphire by MOCVD", Advanced Materials Research, Vols. 79-82, pp. 771-774, 2009

Online since:

August 2009

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$35.00

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