Research on the Dynamic Response of Capacitive RF-MEMS Switch

Ming Xin Song; Rui Wu

doi:10.4028/www.scientific.net/AMR.791-793.1909

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 791-793Research on the Dynamic Response of Capacitive...

Research on the Dynamic Response of Capacitive RF-MEMS Switch

Abstract:

Dynamic response time is an important performance parameter for capacitive RF-MEMS switch. This paper establishes a differential equation, in order to analyse the influencing factors of dynamic response time. The simulation results show that pulling-down time can reach 7.5μs when beam length equals to 200μm, beam width equals to 30μm, beam thickness equals to 1μm, beam material adopts Al and dielectric layer selects Si₃N₄.

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Periodical:

Advanced Materials Research (Volumes 791-793)

Pages:

1909-1912

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.791-793.1909

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Online since:

September 2013

Authors:

Ming Xin Song, Rui Wu

Keywords:

Dynamic Response, Pulling-Down Time, Rf MEMS Switch

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References

[1] Song Mingxin, Zheng Guoxu, Wu Rui. Dielectric charging failure analysis of RF-MEMS switch[C]. 2013, Mechanical Engineering, Materials Science and Civil Engineering, 2013: 170-173.

DOI: 10.4028/www.scientific.net/amm.274.170

Google Scholar

[2] J．Chabloz, Muller. Building blocks for an ultra low-power MEMS-based radio[C]. Proceedings IEEE International Workshop on Radio-Frequency Integrated Technology. 2011: 158-167.

DOI: 10.1109/rfit.2007.4444014

Google Scholar

[3] CHANG C L, CHANG P Z. Innovative micro machined microwave switch with very low insertion loss [J]. Sensors and Actuators, 2010, 79(2): 71-75.

DOI: 10.1016/s0924-4247(99)00218-6

Google Scholar

[4] LIN T H, POWERS B. Micro-mechanical membrane switches for microwave applications Tech [C]. Digest. IEEE Microwave Theory and Techniques Symp, 2005: 91-94.

Google Scholar