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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 854Effect of Ge-Nanoislands on the Low-Frequency...

Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiO_x/Ge Structures

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Abstract:

Low-frequency noise of the structures with Ge-nanoclusters of rather high surface density grown on the oxidized silicon surface is investigated for the first time. It was revealed that the 1/f^γ noise, where γ is close to unity, is the typical noise component. Nevertheless, the 1/f^γ noise sources were found to be distributed nonuniformly upon the oxidized silicon structure with Ge-nanoclusters. The noise features revealed were analyzed in the framework of widely used noise models. However, the models used appeared to be unsuitable to explain the noise behavior of the structures studied. The physical processes that should be allowed for to develop the appropriate noise model are discussed.

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Functional Nanomaterials and Devices VII

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Periodical:

Advanced Materials Research (Volume 854)

Pages:

21-27

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.854.21

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Online since:

November 2013

Authors:

N.P. Garbar, Valeriya N. Kudina, V.S. Lysenko, S.V. Kondratenko, Yu.N. Kozyrev

Keywords:

1/f Noise, Ge-Nanocluster, Low-Frequency Noise, Mobility Fluctuation Model, Number Fluctuation Model, Oxidized Silicon Substrate

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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