Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films

Dmitry Osintsev; V. Sverdlov; Siegfried Selberherr

doi:10.4028/www.scientific.net/AMR.854.29

Paper Titles

Preface, Committees and Sponsors

An Experimental Study of Properties of Ultrathin Si Layer with Bonded Si/SiO₂ Interface
p.3

Transport and Photoelectric Effects in Structures with Ge and SiGe Nanoclusters Grown on Oxidized Si (001)
p.11

Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiO_x/Ge Structures
p.21

Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films
p.29

On the Mobility Behavior in Highly Doped Junctionless Nanowire SOI MOSFETs
p.35

High Sensitive Active MOS Photo Detector on the Local 3D SOI-Structure
p.45

Properties of Low-Dimentional Polysilicon in SOI Structures for Low Temperature Sensors
p.49

Carbon-Rich Nanostructurated a-SiC on Si Heterostructures for Field-Effect Electron Emission
p.59

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 854Acoustic Phonon and Surface Roughness Spin...

Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films

Abstract:

We consider the impact of the surface roughness and phonon induced relaxation on transport and spin characteristics in ultra-thin SOI MOSFET devices. We show that the regions in the momentum space, which are responsible for strong spin relaxation, can be efficiently removed by applying uniaxial strain. The spin lifetime in strained films can be improved by orders of magnitude, while the momentum relaxation time determining the electron mobility can only be increased by a factor of two.

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Periodical:

Advanced Materials Research (Volume 854)

Pages:

29-34

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.854.29

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Online since:

November 2013

Authors:

Dmitry Osintsev, V. Sverdlov, Siegfried Selberherr

Keywords:

Phonon Relaxation, Shear Strain, Surface-Roughness Relaxation, Ultra-Scaled SOI MOSFETs

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