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Investigation of Time Instability Factors in Ti-SbxTe Based Phase Change Memory

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Abstract:

In this paper, the two time instability factors in phase change memory, amorphous resistance drift and spontaneous crystallization process, are studied based on Ti2.75(SbxTe)97.25 and Ti6.85(SbxTe)93.15. The drift coefficients of both components are calculated and compared under room temperature. The reason why the drift coefficient decreases with the Ti concentration increases is discussed based on the band structure model of amorphous phase change materials. And the data retention change trend is also presented. The experiment results and the physical explaination can also be extended to other metallic element doped SbxTe alloy phase change materials.

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Periodical:

Advanced Materials Research (Volume 873)

Pages:

825-830

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.873.825

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Online since:

December 2013

Authors:

Xing Long Ji*, Liang Cai Wu, Feng Rao, Zhi Tang Song, Min Zhu, Song Lin Feng

Keywords:

Amorphous Resistance Drift, Data Retention, Phase Change Materials (PCM), Time Instability

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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