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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 873Advance of Ge/Si Quantum Dot Infrared...

Advance of Ge/Si Quantum Dot Infrared Photodetector

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Abstract:

The generation of quantum dots (QDs), the advantages and disadvantages of quantum dot infrared photodetector (QDIP) are briefly reviewed. Typical techniques for fabricating ordered Ge/Si QDs, the application of Ge/Si QDIP in optical communication and thermal imaging and the structure optimization are described. Finally, the key problems for improving the properties of Ge/Si QDs and Ge/Si QDIP, future trends and prospects are discussed.

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The Eighth China National Conference on Functional Materials and Applications

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Periodical:

Advanced Materials Research (Volume 873)

Pages:

799-808

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.873.799

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Online since:

December 2013

Authors:

Peng He*, Chong Wang, Jie Yang, Yu Yang

Keywords:

Ge/Si Quantum Dot, Quantum Dot (QD), Quantum Dot Infrared Photodetector

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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