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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 873Photoelectric Properties of the Doped Silicon with...

Photoelectric Properties of the Doped Silicon with Carbon Family Elements

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Abstract:

Today, silicon material plays an irreplaceable role in microelectronic of the information industry, however it don`t have a good emission characteristics. In order to explore the emission character, we calculated the electrons structure, absorbance of silicon doped with C, Si, Ge, Sn and Pb by the first-principles methods.

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The Eighth China National Conference on Functional Materials and Applications

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Periodical:

Advanced Materials Research (Volume 873)

Pages:

793-798

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.873.793

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Online since:

December 2013

Authors:

Peng Fei Ji*, Chong Wang, Jie Yang, Zhang Sheng Shi, Yu Yang

Keywords:

Calculation, Doping Silicon, Electro-Optical Properties

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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