Fabrication and Characterization of Stacked Self-Assembled In0.5Ga0.5As/GaAs Quantum Dots Grown by MOCVD

Didik Aryanto; Zulkafli Othaman; A. Khamim Ismail

doi:10.4028/www.scientific.net/AMR.896.215

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 896Fabrication and Characterization of Stacked...

Fabrication and Characterization of Stacked Self-Assembled In_0.5Ga_0.5As/GaAs Quantum Dots Grown by MOCVD

Abstract:

Stacked self-assembled In_0.5Ga_0.5As/GaAs quantum dots (QDs) were grown using metal organic chemical vapor deposition (MOCVD). Atomic force microscopy (AFM), transmission electron microscopy (TEM) and high resolution X-ray diffraction (HR-XDR) show the effects of stacking on morphology and structure of QDs. Strains due to the buried QDs affect the shape and alignment of the successive layers. Capping of these QDs also determine the quality of the top most QDs structure.

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Periodical:

Advanced Materials Research (Volume 896)

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215-218

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.896.215

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Online since:

February 2014

Authors:

Didik Aryanto*, Zulkafli Othaman, A. Khamim Ismail

Keywords:

AFM, High Resolution X-Ray Diffraction (HR-XRD), Quantum Dot (QD), TEM

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