Experimental Research on the Magnetic Mechanisms of Zn0.990Co0.010O Diluted Magnetic Semiconductor by Al-Doping

Qian Gao; Xiao Li Liu; Yang Qi; Ben Zhe Sun; Lian Zhong Qi

doi:10.4028/www.scientific.net/AMR.924.302

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 924Experimental Research on the Magnetic Mechanisms...

Experimental Research on the Magnetic Mechanisms of Zn_0.990Co_0.010O Diluted Magnetic Semiconductor by Al-Doping

Abstract:

The effect of Al-doping concentration and sintered temperature (ST) on the structure and room-temperature ferromagnetism (RTFM) of Al-doped Zn_0.990Co_0.010O nanocrystals was investigated. The experimental results have indicated that all samples have RTFM and are composed of wurtzite ZnO with hexagonal structure without any secondary phases. The crystallization quality is positive related to ST and negative related to Al-doping concentration. When ST is higher than 800°C, the RTFM is dominated by the long rang coupling induced from the conductive carriers of Al³⁺, since it is increasing with the increase of Al-doping concentration and grain sizes. When ST is lower than 800°C, the RTFM is dominated by localized carriers from oxygen vacancies, since the maximum RTFM belongs to the sample which has the lowest parameters of unit cell.

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Periodical:

Advanced Materials Research (Volume 924)

Pages:

302-305

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.924.302

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Online since:

April 2014

Authors:

Qian Gao, Xiao Li Liu, Yang Qi*, Ben Zhe Sun, Lian Zhong Qi

Keywords:

Al-Doping, Magnetic Mechanisms, Zn_0.990Co_0.010O Diluted Magnetic Semiconductor

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