The Photoluminescence from (Eu, Yb) Co-Doped Silicon-Rich Si Oxides

Abstract:

We report on photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped silicon oxide films with different Si excess. After annealing the films in N₂, strong PL were observed from Eu and Yb³⁺ ions and their intensities are correlated. The PL intensity of Eu is mainly from 3+ for no and relatively low temperature anneals (<900 ^°C) while the Eu²⁺ emission is dominating for annealing at 1000 ^°C or above in the co-doped Si-rich oxide films. Transmission electron microscopy shows amorphous (Eu, Yb, Si, O)-containing precipitates in the Si-rich oxide during 1000-1200 ^°C annealing and these precipitates are considered to be responsible for the Eu²⁺-related luminescence.

• Periodical: Advanced Materials Research (Volume 936)
• Pages: 207-211
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.936.207
• Online since: June 2014
• Authors: Cheng Lin Heng*, Wen Yong Su, Qi Wei Zhang, X.Q. Ren, P.G. Yin, H.P. Pan, S.D. Yao, Terje G. Finstad
• Keywords: Energy Transfer, Eu, Luminescence, Rare Earth Compounds, Silicon Rich Oxide, Yb

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