Cu(In,Ga)Se2 Films Deposited by Sputtering with Single Cu(In,Ga)Se2 and Cu-Ga-In2Se3 Targets and a Subsequent Selenization Procedure

Dong Hau Kuo; Yung Chin Tu; Wei Liang Chen

doi:10.4028/www.scientific.net/AMR.936.197

Paper Titles

Preparation of C@ZrSiO₄ Inclusion Pigment Using Compound Colorants via Non-Hydrolytic Sol-Gel Method
p.170

Fabrication and Characterization of SiC-Coated Multi-Walled Carbon Nanotubes Reinforced Reaction Bonded SiC Composite
p.176

Carbonization Effect on Phase Structures of Zirconium Oxides with 2-3 Percent Yttrium
p.181

Numerical Research of the Beryllia Ceramics Formation Process
p.187

Cu(In,Ga)Se₂ Films Deposited by Sputtering with Single Cu(In,Ga)Se₂ and Cu-Ga-In₂Se₃ Targets and a Subsequent Selenization Procedure
p.197

Effect of Hydrogen Dilution Ratio and Substrate Roughness on the Microstructure of Intrinsic Microcrystalline Silicon Thin Films
p.202

The Photoluminescence from (Eu, Yb) Co-Doped Silicon-Rich Si Oxides
p.207

Compatibility of Polyvinylidene Difluorid/Polyurethane and Preparation of Composite Tubular Membrane
p.212

Preparation and Properties of Two-Dimensional Braid Heterogeneous-Reinforced Polyvinylidene Fluoride Hollow Fiber Membrane
p.218

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 936Cu(In,Ga)Se2 Films Deposited by Sputtering with...

Cu(In,Ga)Se₂ Films Deposited by Sputtering with Single Cu(In,Ga)Se₂ and Cu-Ga-In₂Se₃ Targets and a Subsequent Selenization Procedure

Abstract:

Cu(In,Ga)Se₂ (CIGSe) thin films were prepared by sputtering with single CIGSe or Cu-Ga-In₂Se₃ target and subsequent selenization at 550-700°C. The one- and two-step selenization procedures and the ceramic and cermet targets were used for process comparisons. Microstructure, film growth and film composition were used to evaluate the growth performance. CIGSe films sputtered from the CIGSe target had a low Cu content. CIGSe films prepared with single Cu-Ga-In₂Se₃ target had shown different performance after the one- and two-step selenization procedures. The two-step process did not grow the dense films due to the vaporization of Se-containing species from the incomplete reaction. The high-temperature requirement is the major disadvantage for the post-selenization approach.

You might also be interested in these eBooks

Materials Science and Engineering Technology

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 936)

Pages:

197-201

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.936.197

Citation:

Cite this paper

Online since:

June 2014

Authors:

Dong Hau Kuo*, Yung Chin Tu, Wei Liang Chen

Keywords:

Cu(In,Ga)Se₂, Selenization, Sputtering, Thin-Film Solar Cells

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Ph. Jackson, D. Harsco's, E. Lottery, S. Patel, R. Wooers, R. Manner, W. Washman, M. Powell, New World Record Efficiency for Cu(In, Ga)Se2 Thin-Film Solar Cells Beyond 20%, Prog. Photo volt: Res. Appl. 19 (2011) 894-897.

DOI: 10.1002/pip.1078

Google Scholar

[2] U.P. Singh, S.P. Patrai, Progress in Polycrystalline Thin-Film Cu(In, Ga)Se2 Solar Cells, Int. J. Photo energy 468147 (2010) 1-19.

Google Scholar

[3] A.M. Fernandez, R.N. Bhattacharya, Electrode Position of CuIn1−xGaxSe2 Precursor Films: Optimization of Film Composition and Morphology, Thin Solid Films 474 (2005) 10-13.

DOI: 10.1016/j.tsf.2004.02.104

Google Scholar

[4] D.Y. Lee, M.S. Kim, L. Larine, B.T. Han, Effect of Cu Content on the Photovoltaic Properties of Cu(In, Ga)Se2 Solar Cells Prepared by the Evaporation of Binary Selenide Sources, Electron. Mater. Lett. 4 (2008) 13-18.

Google Scholar

[5] N. Romeo, A. Bosio, S. Mazzamuto, D. Menossi, A. Romeo, CIGS Thin Films Prepared by Sputtering and Selenization by Using In2Se3, Ga2Se3 and Cu as Sputtering Targets, 2010 10th IEEE Intl. Conf. on Solid-State and Integr. Circ. Technol. (2010).

DOI: 10.1109/pvsc.2010.5617109

Google Scholar

[6] C.H. Huang, Y.C. shih, W.J. Chuang, C.P. Lin, Impacts of Process Parameters on CIGS Solar Cells Prepared by Selenization Process with Se Vapor, 2010 10th IEEE Intl. Conf. on Solid-State and Integr. Circ. Technol. (2010) 2019-(2021).

DOI: 10.1109/icsict.2010.5667893

Google Scholar

[7] J-H Shi, Z.Q. Li, D.W. Zang, Q.Q. Liu, Z. Sun, S.M. Huang, Fabrication of Cu(In, Ga)Se2 Thin Films by Sputtering from a Single Quaternary Chalcogenide Target, Prog. Photovolt: Res. Appl. 19, (2011) 160-164.

DOI: 10.1002/pip.1001

Google Scholar