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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 984-985Relative Analysis of GaAs, InSb, InP Using QWFET

Relative Analysis of GaAs, InSb, InP Using QWFET

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Abstract:

Indium Antimonide (InSb) has the greater electron mobility and saturation velocity of any semiconductor. Also InSb detectors are sensitive between 1–5 μm wavelengths and it belongs to III-V [13] component. In this paper we compare the InSb with some other major components like Indium Phosphide (InP) and Gallium Arsenide (GaAs) which are also from same III-V group. The analysis was made using the simulation tool TCAD and using the properties and band structure of those materials we compare InSb with InP and GaAs. The results we proposed shows that InSb is best for ultra high speed and very low power applications.

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Periodical:

Advanced Materials Research (Volumes 984-985)

Pages:

1080-1084

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.984-985.1080

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Online since:

July 2014

Authors:

T.D. Subash*, T. Gnanasekaran, J. Jagannathan, C. Divya

Keywords:

Band Structure, GaAs, InP, InSb, Quantum Well, QWFET

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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