Advanced Real Time Metrology of AlGaN/GaN and InGaN/GaN Epitaxy

Tong Ho Kim; Soo Jeong Choi; April S. Brown; Maria Losurdo; Giuseppe Valerio Bianco; Maria M. Giangregorio; Giovanni Bruno

doi:10.4028/www.scientific.net/AST.75.124

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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 75Advanced Real Time Metrology of AlGaN/GaN and...

Advanced Real Time Metrology of AlGaN/GaN and InGaN/GaN Epitaxy

Abstract:

Nitride materials are critical for a range of applications, including UV-visible light emitting diodes (LEDs). Advancing the performance, reliability and synthesis of AlGaN/GaN and InGaN/GaN heterojunction devices requires a systematic methodology enabling characterization of key metric like alloy composition, thickness and quality possibly in real time. This contribution reports on the real time characterization of the plasma assisted molecular beam epitaxy of AlGaN/GaN and InGaN/GaN heterostructures. Spectroscopic ellipsometry real time monitoring has revealed a number of key process and material iusses, such as the roughening of the GaN templates depending on plasma exposure during the substrate cleaning step, the composition of the alloy and the growth mode. Parameters like the plasma conditions, the surface temperature and the atomic flow ratio are investigated to understand the interplay process-material composition-structure-optical properties.

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Periodical:

Advances in Science and Technology (Volume 75)

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124-129

DOI:

https://doi.org/10.4028/www.scientific.net/AST.75.124

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Online since:

October 2010

Authors:

Tong Ho Kim, Soo Jeong Choi, April S. Brown, Maria Losurdo, Giuseppe Valerio Bianco, Maria M. Giangregorio, Giovanni Bruno

Keywords:

AlGaN, Epitaxy, Gallium Nitride (GaN), InGaN, Spectroscopic Ellipsometry (SE)

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References

[1] J. M. Moison, C. Guille, and M. Bensoussan: Phys. Rev. Lett., Vol. 58 (1997), 2555.

Google Scholar

[2] S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto: Jpn. J. Appl. Phys., Vol. 35 (1996), L74.

DOI: 10.1143/jjap.35.l74

Google Scholar

[3] J.L. Pau, C. Rivera, E. Muñoz, E. Calleja, U. Schülle, E. Frayssinet, B. Beaumont, : Journal of Applied Physics, Vol. 95 (2004), 8275-8279.

Google Scholar

[4] P. Waltereit, O. Brandt, A. Trampert, M. Ramsteiner, M. Reiche, M. Qi, K.H. Ploog, Appl. Phys. Lett., Vol. 74 (1999), 3660.

DOI: 10.1063/1.123214

Google Scholar

[5] K. Jeganathan, M. Shimizu, H. Okumura, S. Nishizawa, F. Hirose, Surf. Sci., Vol. 527 (2003), L197.

Google Scholar

[6] G. Bruno, M. Losurdo, M. M. Giangregorio, P. Capezzuto, A. S. Brown, Tong-Ho Kim, Soojeong Choi, Applied Surface Science, Vol. 253 (2006), 219–223.

DOI: 10.1016/j.apsusc.2006.05.129

Google Scholar

[7] H.G. Tompkins, E.A. Irene, in Handbook of Ellipsometry, William Andrei Publishing, NY (2004).

Google Scholar

[8] P. Schley, R. Goldhahn, * A. T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, H. Lu, W. J. Schaff, M. Kurouchi, Y. Nanishi, M. Rakel, C. Cobet, N. Esser, Phys. Rev. B 75, 205204 (2007).

DOI: 10.1002/pssb.200565303

Google Scholar