Effect of Temperature on Phase Transition of Ni-Co Oxide and its Application on Optoelectronics

Abstract:

Ni-Co thin films were prepared on glass substrate by RF magnetron sputtering technique. Post-deposition annealing of Ni-Co film in oxygen atmosphere was found to improve film structure and electrical characteristics. The correlation between annealing conditions and the physical structure of the films was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Vis-NIR spectrophotometer. The lowest resistivity was observed after annealing a sputter-deposited Ni-Co film at 600 °C for 5h. The transmittance showed more than 85% in the infrared range. The preferred annealing condition has been found to improve Ni-Co film characteristics for transparent conducting material applications.Keywords: Ni-Co film, annealing, phase transition

• Periodical: Advances in Science and Technology (Volume 93)
• Pages: 247-251
• DOI: https://doi.org/10.4028/www.scientific.net/AST.93.247
• Online since: October 2014
• Authors: Shu Yi Tsai*, Kuan Zong Fung, Chao Nan Wei, Hui Yun Bor
• Keywords: Annealing, Ni-Co Film, Phase Transition

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