Several Approaches to Bipolar Oxide Diodes with High Rectification

Abstract:

We report on advances in the fabrication of high quality bipolar heterodiodes with oxideelectrodes. The highest rectification above 10¹⁰ is obtained for a structure from a-ZCO/ZnO/ZnO:Alon Al₂O₃ (a-ZCO: amorphous ZnCo₂O₄). Rectification better than 10⁶, a value larger than reportedfor all previous attempts, is obtained for our a-ZCO/a-ZTO (a-ZTO: amorphous zinc tin oxide), a-NiO/ZnO and CuI/ZnO diodes. The ZCO/ZnO has been used as gate in JFETs with ZnO as channel.The bipolar diodes open the field of oxide semiconductor electronics to applications in photovoltaics.

• Periodical: Advances in Science and Technology (Volume 93)
• Pages: 252-259
• DOI: https://doi.org/10.4028/www.scientific.net/AST.93.252
• Online since: October 2014
• Authors: Marius Grundmann, Friedrich Leonard Schein, Robert Karsthof, Peter Schlupp, Holger von Wenckstern
• Keywords: Amorphous Semiconductor, Bipolar, Cuprous Iodide, Diode, Pulsed Laser Deposition, Zinc Oxide, Zinc Tin Oxide

References

[1] T. Minami, Semicond. Sci. Technol. 20, S35 (2005).

[2] Transparent Conductive Zinc Oxide, K. Ellmer, A. Klein, B. Rech, eds., Springer Series in Materials Science Vol. 104 (Springer, Berlin, 2008).

DOI: 10.1007/978-3-540-73612-7

[3] H. Frenzel, A. Lajn and M. Grundmann, phys. stat. sol. RRL 7, 605 (2013).

[4] Zh. Zhang, H. von Wenckstern, M. Schmidt and M. Grundmann, Appl. Phys. Lett. 99, 083502 (2011).

[5] Zh. Zhang, H. von Wenckstern and M. Grundmann, Appl. Phys. Lett. 103, 171111 (2013).

[6] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano and H. Hosono, Nature 432, 488 (2004).

[7] F.-L. Schein, H. von Wenckstern, H. Frenzel and M. Grundmann, IEEE Electron Device Letters 33, 676 (2012).

[8] H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz and M. Grundmann, Appl. Phys. Lett. 89, 092122 (2006).

DOI: 10.1063/1.2335798

[9] F.-L. Schein, M. Winter, T. Böntgen, H. von Wenckstern and M. Grundmann, Appl. Phys. Lett. 104, 022104 (2014).

DOI: 10.1063/1.4861648

[10] M. Grundmann, F.-L. Schein, M. Lorenz, T. Böntgen, J. Lenzner and H. von Wenckstern, phys. stat. sol. (a) 210, 1671 (2013).

DOI: 10.1002/pssa.201329349

[11] F.-L. Schein, H. von Wenckstern and M. Grundmann: Appl. Phys. Lett. 102, 092109 (2013).

[12] P. Schlupp, H. von Wenckstern, M. Grundmann, Proc. Mat. Res. Soc. 1633, 101 (2014).

[13] S. Müller, H. von Wenckstern, O. Breitenstein, J. Lenzner and M. Grundmann IEEE Trans. Electron Devices 59, 536 (2012)

DOI: 10.1109/ted.2011.2177984

[14] M.-J. Lee, S. Seo, D.-C. Kim, S.-E. Ahn, D.H. Seo, I.-K. Yoo, I.-G. Baek, D.-S. Kim, I.-S. Byun, S.-H. Kim, I.-R. Hwang, J.-S. Kim, S.-H. Jeon and B.H. Park, Adv. Mater. 19, 73 (2007).

DOI: 10.1002/adma.200601025

[15] J.D. Levine, Solid-State Electronics 17, 1083 (1974).

[16] V.A. Johnson, R.N. Smith and H.J. Yearian, J. Appl. Phys. 21, 283 (1950).