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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 93InGaN/GaN Quantum Dot and Nanowire LEDs and Lasers

InGaN/GaN Quantum Dot and Nanowire LEDs and Lasers

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Abstract:

GaN-based InGaN/GaN self-organized quantum dots and InGaN quantum dots (disks) in GaN nanowires are important nanostructures with potential advantages over planar quantum wells, including luminescence at the longer visible wavelengths. We describe the epitaxy and characteristics of red-emitting InGaN/GaN quantum dot edge-emitting lasers and InGaN/GaN nanowire light emitting diodes, which can be used in a host of applications.

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Periodical:

Advances in Science and Technology (Volume 93)

Pages:

270-275

DOI:

https://doi.org/10.4028/www.scientific.net/AST.93.270

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Online since:

October 2014

Authors:

Pallab Bhattacharya, Thomas Frost, Animesh Banerjee, Shafat Jahangir

Keywords:

InGaN/GaN, Laser, Light Emitting Diode (LED), Molecular Beam Epitaxy, Quantum Dot (QD)

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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