Bismuth Vanadate-Based Photoelectrodes for Photoelectrochemical Water Splitting: Synthesis and Characterisation

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The main aim of this study was to electrochemically synthesize and characterise bismuth vanadate (BiVO4) photoelectrodes for photoelectrochemical (PEC) water splitting. The influence of annealing temperature on the nanostructured semiconductor BiVO4 thin film structure was studied systematically. This was followed by advanced characterisation of the BiVO4 photoelectrodes by using field emission-scanning electron microscopy (FE-SEM), Raman spectroscopy, photoluminescence and PEC properties measurements. When the electrochemically synthesized BiVO4 thin films were subjected to different annealing temperatures, phase transitions occurred for tetragonal BiVO4 at 300 °C and monoclinic BiVO4 at 400 °C. Through this study, it was found that the annealing treatment at 400 °C resulted in the highest photocurrent density (i.e. photoactivity) of 1.23 mA/cm2 at 0.6 V vs. Ag/AgCl. Finally, the BiVO4/CuO heterojunction photoelectrode was also fabricated in order to further enhance its photoactivity under visible light irradiation.

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9-16

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October 2016

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