Defect Production in Si:Ge Irradiated by Gamma-Rays at 4.2K, 78K and 300K

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Edited by:

Nickolay T. Bagraev

Pages:

311-316

Citation:

V. V. Emtsev et al., "Defect Production in Si:Ge Irradiated by Gamma-Rays at 4.2K, 78K and 300K", Defect and Diffusion Forum, Vols. 103-105, pp. 311-316, 1993

Online since:

January 1993

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$38.00

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