Radiation Defect Formation in Silicon Doped with Impurities of the Group IV Transition Metals

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Edited by:

Nickolay T. Bagraev

Pages:

287-292

Citation:

L.A. Kazakevich et al., "Radiation Defect Formation in Silicon Doped with Impurities of the Group IV Transition Metals", Defect and Diffusion Forum, Vols. 103-105, pp. 287-292, 1993

Online since:

January 1993

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$38.00

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