Paper Titles

Electron Stimulated Defect Reactions in Silicon under Pulsed Photon Treatment
p.265

Piezocapacitance Spectroscopy of Deep Level Centers in Silicon
p.273

Deep Levels of Thermal Defects in High Resistivity Silicon
p.277

Capacitance Transient Spectroscopy of Process-Induced Defects with Deep Levels in P-Type Silicon
p.283

Radiation Defect Formation in Silicon Doped with Impurities of the Group IV Transition Metals
p.287

Influence Intrinsic Elastic Stresses on the Annealing Processes of Radiation Defects in Silicon
p.293

Thermal Broadening of the Absorption Lines of Group III and V Elements in Single-Crystal Silicon
p.299

Interstitial Oxygen in Nature and Monoisotopic Germanium
p.305

Defect Production in Si:Ge Irradiated by Gamma-Rays at 4.2K, 78K and 300K
p.311

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105Radiation Defect Formation in Silicon Doped with...

Radiation Defect Formation in Silicon Doped with Impurities of the Group IV Transition Metals

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors I

Info:

Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

287-292

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.287

Citation:

Cite this paper

Online since:

January 1993

Authors:

L.A. Kazakevich, V.I. Kuznetsov, P.F. Lugakov, A.R. Salmanov

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: