Paper Titles

Capacitance Transient Spectroscopy of Process-Induced Defects with Deep Levels in P-Type Silicon
p.283

Radiation Defect Formation in Silicon Doped with Impurities of the Group IV Transition Metals
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Influence Intrinsic Elastic Stresses on the Annealing Processes of Radiation Defects in Silicon
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Thermal Broadening of the Absorption Lines of Group III and V Elements in Single-Crystal Silicon
p.299

Interstitial Oxygen in Nature and Monoisotopic Germanium
p.305

Defect Production in Si:Ge Irradiated by Gamma-Rays at 4.2K, 78K and 300K
p.311

The Substitutional Reaction in Alloys Si_1-xGe_x
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The Defects in Germanium-Silicon Alloys
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The Influence of Current Carriers on Shallow Impurity Limited Solubility in Semiconductors
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105Interstitial Oxygen in Nature and Monoisotopic...

Interstitial Oxygen in Nature and Monoisotopic Germanium

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Defects in Semiconductors I

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

305-310

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.305

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Online since:

January 1993

Authors:

F.M. Vorobkalo, Lyudmila I. Khirunenko, V.I. Shakhovtsov, V.K. Shinkarenko

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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