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Radiation Defect Formation in Silicon Doped with Impurities of the Group IV Transition Metals
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105Capacitance Transient Spectroscopy of...

Capacitance Transient Spectroscopy of Process-Induced Defects with Deep Levels in P-Type Silicon

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Defects in Semiconductors I

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

283-286

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.283

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Online since:

January 1993

Authors:

Ekaterina V. Astrova, V.B. Voronkov, Alexander A. Lebedev

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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