Capacitance Transient Spectroscopy of Process-Induced Defects with Deep Levels in P-Type Silicon

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Edited by:

Nickolay T. Bagraev

Pages:

283-286

DOI:

10.4028/www.scientific.net/DDF.103-105.283

Citation:

E. V. Astrova et al., "Capacitance Transient Spectroscopy of Process-Induced Defects with Deep Levels in P-Type Silicon", Defect and Diffusion Forum, Vols. 103-105, pp. 283-286, 1993

Online since:

January 1993

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$35.00

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