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Capacitance Transient Spectroscopy of Process-Induced Defects with Deep Levels in P-Type Silicon
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Radiation Defect Formation in Silicon Doped with Impurities of the Group IV Transition Metals
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Influence Intrinsic Elastic Stresses on the Annealing Processes of Radiation Defects in Silicon
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Thermal Broadening of the Absorption Lines of Group III and V Elements in Single-Crystal Silicon
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Interstitial Oxygen in Nature and Monoisotopic Germanium
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Defect Production in Si:Ge Irradiated by Gamma-Rays at 4.2K, 78K and 300K
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The Substitutional Reaction in Alloys Si_1-xGe_x
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The Defects in Germanium-Silicon Alloys
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105Thermal Broadening of the Absorption Lines of...

Thermal Broadening of the Absorption Lines of Group III and V Elements in Single-Crystal Silicon

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Defects in Semiconductors I

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

299-304

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.299

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Online since:

January 1993

Authors:

N.I. Agladze, A.S. Kaminskii, A.N. Safonov

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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