Thermal Broadening of the Absorption Lines of Group III and V Elements in Single-Crystal Silicon

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Edited by:

Nickolay T. Bagraev

Pages:

299-304

DOI:

10.4028/www.scientific.net/DDF.103-105.299

Citation:

N.I. Agladze et al., "Thermal Broadening of the Absorption Lines of Group III and V Elements in Single-Crystal Silicon", Defect and Diffusion Forum, Vols. 103-105, pp. 299-304, 1993

Online since:

January 1993

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$35.00

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