Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods

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Periodical:

Defect and Diffusion Forum (Volumes 218-220)

Edited by:

D.J. Fisher

Pages:

1-16

DOI:

10.4028/www.scientific.net/DDF.218-220.1

Citation:

M. Kato et al., "Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods ", Defect and Diffusion Forum, Vols. 218-220, pp. 1-16, 2003

Online since:

August 2003

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$35.00

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