Paper Titles

Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods
p.1

The Formation of p-Type ZnO Films by Using a Diffusion Process
p.17

The Role of Dislocations in the Plastic Behavior of Silicon Nitride A Review
p.23

Structural Defects in Amorphous Silicon Oxynitride and Silicon Nitride
p.39

Sintering Characteristics of Nano-Ceramic Coatings
p.51

Ab Initio Modelling of Metal Adhesion to Ceramics with Surface Defects
p.67

The Effective Diffusivity in Two-Phase Material
p.79

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 218-220Deep Level Characterization and its Passivation in...

Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods

Article Preview

Abstract:

You might also be interested in these eBooks

Defects and Diffusion in Ceramics V

Info:

Periodical:

Defect and Diffusion Forum (Volumes 218-220)

Pages:

1-16

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.218-220.1

Citation:

Cite this paper

Online since:

August 2003

Authors:

Masashi Kato, Masaya Ichimura, Eisuke Arai, Yutaka Tokuda

Keywords:

3C-SiC, Configuration Coordinate, CTS, DLTS, Hydrogen Plasma, ND1 Center, O-CTS, Passivation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: